AP Seminar - Mechanism and Control of Thin Film Field Effect Transistors

The emergence of new materials has brought new important issues to the fundamental theory and  device mechanisms of thin film field effect transistors. Revealing the intrinsic electrical  characteristics of new materials is very important for both basic research and application research of new materials and new devices. Many newly developed nanowires, two-dimensional nanosheets, organic small molecules or polymers have been used to fabricate field effect transistors (FETs) or thin film transistors (TFTs). However, due to mismatches in  electrode  work  functions,  interface defect  states,  thermal  damage, anisotropic transport, interface trapping, etc., many devices deviate from the characteristics of ideal transistors, which presents great difficulties in deeply studying the transport properties of these semiconductors and the working states of the devices. The advantages of organic semiconductors and oxide semiconductors are very obvious, which can prepare thin film devices through lower temperatures or even solution processes, and have bendability. But the two have a common drawback, that is, the disorderliness of crystal structure leads to a large number of defect states. This leads to significant differences in the mechanisms of charge injection and charge transport in field effect phenomena compared to covalent bonded silicon-based transistor devices. This report will explore new ideas on thin film field effect transistor theory models and characteristic control from both theoretical and experimental perspectives.