AP Seminar - Exploring 2D Materials for Advanced Electronic and Optoelectronic Devices

The development of CMOS integrated circuits faces great challenges due to the inherent silicon limits. Emerging low-dimensional semiconductors are being sought to compensate for silicon deficiencies in advanced electronic and optoelectronic systems. 2D materials have become the promising semiconductors due to their ultrathin thickness that exceeds the scaling limit and excellent physical properties comparable to bulk silicon materials. We present the applications of featured 2D materials in ferroelectric semiconductor junction devices, vertical p-i-n photodiodes, scaled 2D transistors, and memristors, displaying novel physical phenomenon and improved performance. Furthermore, in the intelligent age, there is an urgent need for real-time, low-power processing of sensing data, so that useful information can be extracted efficiently. We enrich the applications of 2D devices for computing in sensor, especially the custom-made devices for spiking neuron networks and the heterogeneous 2D/Si devices for the multidimensional information processing.