Introduction:
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas phase chemical process. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. Through the repeated exposure to separate precursors, a thin film is slowly deposited. ALD is considered one deposition method for producing very thin, conformal films with control of the thickness and composition of the films possible at the atomic level. ALD is a key process in the fabrication of semiconductor devices, and part of the set of tools available for the synthesis of nanomaterials.
Specifications:
- Substrate size: Up to 8”
- Port: 5 precursor lines
- Substrate temp.: max. 280°C
- Deposition Uniformity: < 1% (1σ) for Al2O3 film
- Application: Gate dielectric (microelectronics, transistors), encapsulation/ moisture barrier (solar, organic electronics, MEMS), diffusion barrier (Li-ion batteries), functionalization (graphene, carbon nanotubes)
Notes to user:
Can deposit TiO2, Al2O3, HfO2 and ZrO2 film.
Supplier information:
https://www.veeco.com/products/savannah-thermal-ald-for-rd/
Please click here to download the equipment introduction poster.
Equipment location:
Room HJ705 (Class 1,000)
