The rapid development of edge devices highly demands low-power electronics for effective data acquisition and intelligent information processing. The power consumption of an individual device is proportional to the square of the voltage. To reduce the operation voltage of electron devices, Dr. Yang Chai’s research team demonstrates a new type of transistor with sub-1 V operation voltage, which is recently published in Science Advances 2021, 7: eabf8744. They adopt atomic-level thick two-dimensional (2D) semiconductor as the channel of a transistor and transfer metal gate to 2D MoS2 for forming a high-quality interface at room temperature. The high–barrier height Pt-MoS2 Schottky junction replaces the commonly used metal-oxide-semiconductor capacitor and has intrinsically high junction capacitance and a high-quality interface. This MoS2 transferred metal gate (TMG) field-effect transistor shows sub-1 V operation voltage and a subthreshold slope close to the thermal limit (60 mV/dec). The TMG and the back gate of the TMG transistors enable logic functions in a single transistor with a small footprint, exhibiting promising low-power applications for edge computing.
