Introduction:
Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. Our systems offer a turnkey solution for carbon nanotube and graphene production. The system can operate in both thermal CVD and plasma-enhanced CVD modes, which is extremely important for controlling the structure of carbon nanomaterials as it enables virtually all variations and morphologies of carbon nanotubes, and graphene to be produced.
Specifications:
- Substrate size: Up to 4”
- Fast response heater, up to 300°C/ minute ramp rates
- Excellent reproducibility
- Closed loop infrared wafer temperature control
- Automatic process control
- Fast growth and processing
Notes to user:
Only for growing graphene by copper foil.
Supplier information:
Please click here to download the equipment introduction poster.
Equipment location:
Room HJ705 (Class 1,000)
