Ultrasensitive High-speed Perovskite Photodetectors

Photodetectors are key components for visible light communication. Commercially available photodetectors based on traditional crystalline inorganic semiconductors (e.g., Si and InGaAs) need expensive high- vacuum epitaxial growth.

A simple method is designed to fabricate the pre-contact layer of perovskite photodetector. The device performance was the best up to recent reported n-i-p photodiodes (Detectivity>10¹⁴ Jones & response speed< 1ɥs) with a low-temperature glancing angle deposited TiO nano-forest.

Low temperature fabrication (<80°C) enables the compactness with wearable electronics, like bendable/foldable smartphones, wearable healthcare equipment, etc. To be highlight, this controllable growth technique can be used to fabricate other transporting layers and metal electrodes in solar cells, lithium ion batteries, thermal and mechanical sensors, light-emitting diodes, etc.