Rapid Thermal Processor

Introduction:

The Rapid Thermal Process System is an instrument which heats wafers to high temperatures on a timescale of several minutes or less. Such rapid heating rates are attained by high intensity lamps process. RTP is used for a wide variety of applications in semiconductor manufacturing including ion implant activation, polysilicon annealing, dopant activation, thermal oxidation and metal reflow.

Specifications:

• Substrate size: Up to 4” diameter
• Temp. range: Room temp. to～1150°C
• Ramp up rate: > 50°C /sec
• Gas lines: N₂, O₂, Ar
• Temperature/Time control: Temperature measuring precision ≤ ±2°C

Notes to user:

For working temperature over 900°C, direct contact of Si wafer and thermocouple is forbidden. A thin quartz wafer must be used to place between the Si wafer and thermocouple.

Supplier information:

         https://allwin21.com/

Please click here to download the equipment introduction poster.

Equipment location:

Room HJ705 (Class 1,000)