Introduction:
The Rapid Thermal Process System is an instrument which heats wafers to high temperatures on a timescale of several minutes or less. Such rapid heating rates are attained by high intensity lamps process. RTP is used for a wide variety of applications in semiconductor manufacturing including ion implant activation, polysilicon annealing, dopant activation, thermal oxidation and metal reflow.
Specifications:
- Substrate size: Up to 4” diameter
- Temp. range: Room temp. to～1150°C
- Ramp up rate: > 50°C /sec
- Gas lines: N2, O2, Ar
- Temperature/Time control: Temperature measuring precision ≤ ±2°C
Notes to user:
For working temperature over 900°C, direct contact of Si wafer and thermocouple is forbidden. A thin quartz wafer must be used to place between the Si wafer and thermocouple.
Supplier information:
Please click here to download the equipment introduction poster.
Equipment location:
Room HJ705 (Class 1,000)
